DataSheetWiki


HMC5846LS6 fiches techniques PDF

Analog Devices - GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER

Numéro de référence HMC5846LS6
Description GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
Fabricant Analog Devices 
Logo Analog Devices 





1 Page

No Preview Available !





HMC5846LS6 fiche technique
HMC5846LS6
v01.0414
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Typical Applications
The HMC5846LS6 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space
Features
Saturated Output Power: 35.5 dBm @ 30% PAE
High Output IP3: 42.5 dBm
High Gain: 31 dB
DC Supply: +7V @ 1200 mA
No External Matching Required
Functional Diagram
General Description
The HMC5846LS6 is a 4 stage GaAs pHEMT MMIC
2 Watt Power Amplifier with an integrated temperature
compensated power detector which operates between
12 and 16 GHz. The HMC5846LS6 provides 31 dB
of gain, 35.5 dBm of saturated output power, and
30% PAE from a +7V supply. The HMC5846LS6
exhibits excellent linearity and is optimized for high
capacity digital microwave radio. It is also ideal for
13.75 to 14.5 GHz Ku Band VSAT transmitters as well
as SATCOM applications.
EVdledc=trVicdda1l ,SVpdedc2,ifVicdda3ti,oVndsd,4T, AV=dd+525=
°C
+7V,
Idd
=
1200
mA
[1]
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1200 mA typical.
[2] Measurement taken at +7V @ 1200 mA, Pout / Tone = +22 dBm
Min.
26
32.5
Typ.
12 - 16
31
0.06
10
17
34.5
35.5
42.5
1200
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
1 IrrlTiniecgrfaseohFpdntrseomsoemnoarsfatiisibtrophkingislrirrtdayafiuncnpirsdtnaeeairdrste,sihegsbesduiysdmtteheimebarledtypidvmlbiAcetyaranPayArtadioyrlhnoeenamgsolauooanlDrgtnrkeofeDrsdvtoh:eiamcevrt9ereicowiAst7etsihssippe8usefsopp-lbeuarr2.neoliidtSlcp5isceepeevu0rareetscya-detoinfoi3,iyocfrtno3atdopnhtria4eboeftienoSer3rsrnrsaeutassc:nouppcyrbeHupjipcernFaatcifoirttvttaeieetnrtnoixgtaotte:cnew:rmhdignP9aeeMhnrnh7rtegsstls.8oeiiaocobwnf-frl2Aieepothn.5a:owatHue0lo9tonag-wnt7sv3oDe8otevi3ecre-veo7r2iC,.cth3eN5neosoor.0rp-3oFOPAO3ohprnar4ropedntl3piTieecorei:aorcnc7treihO,8o,na1n2nod-pS3l-eoEp2lulgiil9vpnsiyez-pe@4rWaoy7harb,a0tiy:tae0t,Pntwt•Pidhht.wOeoOtDn.or.wcderB:epoi.vo1hrlmax-eoi8ctn9,et0l1iCi0tn0oe-eh6rA.d,ceaNeNtolArmwosmL:rwOswAfwGoono.-aardDdlno,a,gMloMADgAe.0cv2oi0c0me16s28,-29In410c.6,

PagesPages 9
Télécharger [ HMC5846LS6 ]


Fiche technique recommandé

No Description détaillée Fabricant
HMC5846LS6 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER Analog Devices
Analog Devices

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche