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PDF HMC969 Data sheet ( Hoja de datos )
| Número de pieza | HMC969 | |
| Descripción | GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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v00.1210
Typical Applications
The HMC969 is ideal for:
• Point-to-Point Radios
3 • Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space
Functional Diagram
HMC969
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Features
Saturated Output Power: +31 dBm @ 15% PAE
Output IP3: +38 dBm
High Gain: 22 dB
DC Supply: +6V @ 900 mA
No External Matching Required
Die Size: 2.77 x 2.32 x 0.1 mm
General Description
The HMC969 is a 4 stage GaAs pHEMT MMIC 1 Watt
Power Amplifier which operates between 40 and 43.5
GHz. The HMC969 provides 22 dB of gain, +31 dBm
of saturated output power, and 15% PAE from a +6V
supply. With a very good IP3 of 38 dBm, the HMC969
is ideal for linear applications including military and
space as well as point-to-point and point-to-multi-point
radios. All data is taken with the chip in a 50 Ohm test
fixture connected via (2) 0.025 mm (1 mil) diameter
wire bonds of 0.31 mm (12 mil) length.
Electrical Specifications
TA = +25° C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 900 mA [1]
Parameter
Min.
Frequency Range
Gain
19
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd = 900 mA typical.
[2] Measurement taken at +6V @ 900 mA, Pout / Tone = +18 dBm
Typ.
40 - 43.5
22
0.03
14
27
28
31
38
900
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
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1 page  
v00.1210
Output IP3 vs.
Supply Voltage, Pout/Tone = +18 dBm
45
40
35
30
25
40
5.0V
5.5V
6.0V
41 42 43
FREQUENCY (GHz)
44
Output IM3 @ Vdd = +5.5V
60
50
40
30
20 40 GHz
41 GHz
42 GHz
10
43 GHz
44 GHz
0
10 12 14 16 18 20 22 24
Pout/TONE (dBm)
Power Compression @ 41 GHz
40
35 Pout
Gain
30 PAE
25
20
15
10
5
0
0 3 6 9 12
INPUT POWER (dBm)
15
HMC969
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Output IM3 @ Vdd = +5V
60
50
40
30
20 40 GHz
41 GHz
42 GHz
10
43 GHz
44 GHz
0
10 12 14 16 18 20 22 24
Pout/TONE (dBm)
3
Output IM3 @ Vdd = +6V
60
50
40
30
20 40 GHz
41 GHz
42 GHz
10
43 GHz
44 GHz
0
10 12 14 16 18 20 22 24
Pout/TONE (dBm)
Power Compression @ 42 GHz
40
35 Pout
Gain
30 PAE
25
20
15
10
5
0
0 3 6 9 12
INPUT POWER (dBm)
15
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3-4
5 Page 
v00.1210
HMC969
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.102mm (0.004”) Thick GaAs MMIC
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.076mm
(0.003”)
Wire Bond
RF Ground Plane
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
0.076mm
(0.003”)
Wire Bond
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
3
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3 - 10
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HMC969.PDF ] | |
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