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PDF HMC617LP3 Data sheet ( Hoja de datos )
| Número de pieza | HMC617LP3 | |
| Descripción | GaAs SMT PHEMT LOW NOISE AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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7
7-1
HMC617LP3 / 617LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
Typical Applications
The HMC617LP3(E) is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Access Points
Features
Noise Figure: 0.5 dB
Gain: 16 dB
Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3mm QFN Package: 9 mm2
Functional Diagram
General Description
The HMC617LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 550 and 1200 MHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
16 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC617LP3(E) shares the same package and
pinout with the HMC618LP3(E) 1.7 - 2.2 GHz LNA.
The HMC617LP3(E) can be biased with +3V to +5V
and features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application. The
HMC617LP3(E) offers improved noise figure versus
the previously released HMC372LP3(E) and the
HMC376LP3(E).
Electrical Specifications, TA = +25° C, Rbias = 3.92k Ohms*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
Vdd = +3 Vdc
Min. Typ. Max. Min. Typ. Max.
698 - 960
550 - 1200
13 16
11 15
0.003
0.003
0.5 0.8
0.5 1.1
28 22
12 14
14 16
12.5 16
17
31
30 45
16.5
30
30
45
Vdd = +5 Vdc
Min. Typ. Max. Min. Typ. Max.
698 - 960
550 - 1200
13.5 16
11.5 16
0.005
0.005
0.55 0.85
0.6 1.1
22 17
12 15
Units
MHz
dB
dB/ °C
dB
dB
dB
18.5 21
16.5 20
dBm
21
37
88 115
20.5
dBm
37 dBm
88 115 mA
* Rbias resistor sets current, see application circuit herein
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1 page  
v02.0610
Power Compression @ 700 MHz [1]
50
40
30
Pout
Gain
PAE
20
10
0
-10
-16 -14 -12 -10 -8 -6 -4 -2 0 2 4
INPUT POWER (dBm)
HMC617LP3 / 617LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
Power Compression @ 700 MHz [2]
50
40
Pout
30 Gain
PAE
20
10
0
-10
-18 -16 -14 -12 -10 -8 -6 -4 -2
INPUT POWER (dBm)
0
7
Power Compression @ 900 MHz [1]
50
40
30
Pout
Gain
PAE
20
10
0
-10
-14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
INPUT POWER (dBm)
Gain, Power & Noise Figure
vs. Supply Voltage @ 700 MHz [3]
24
GAIN
P1dB
20
16 Noise Figure
2.7 3.1 3.5 3.9 4.3 4.7 5.1
SUPPLY VOLTAGE (V)
1.2
1
0.8
0.6
0.4
0.2
0
5.5
Power Compression @ 900 MHz [2]
50
40
30
Pout
Gain
PAE
20
10
0
-10
-16 -14 -12 -10 -8 -6 -4 -2 0 2 4
INPUT POWER (dBm)
Gain, Power & Noise Figure
vs. Supply Voltage @ 900 MHz [3]
24
1
22 GAIN
P1dB
20
0.8
0.6
18 0.4
16 0.2
Noise Figure
14 0
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
SUPPLY VOLTAGE (V)
[1] Vdd = 5V, Rbias = 3.92K [2] Vdd = 3V, Rbias = 3.92K [3] Rbias = 3.92K
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7-4
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HMC617LP3.PDF ] | |
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