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Numéro de référence | CY15B102N | ||
Description | 2-Mbit (128K x 16) Automotive F-RAM Memory | ||
Fabricant | Cypress Semiconductor | ||
Logo | |||
1 Page
CY15B102N
2-Mbit (128K × 16) Automotive F-RAM
Memory
2-Mbit (128K × 16) Automotive F-RAM Memory
Features
■ 2-Mbit ferroelectric random access memory (F-RAM™)
logically organized as 128K × 16
❐ Configurable as 256K × 8 using UB and LB
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (see the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Page-mode operation for 30-ns cycle time
❐ Advanced high-reliability ferroelectric process
■ SRAM compatible
❐ Industry-standard 128K × 16 SRAM pinout
❐ 60-ns access time, 90-ns cycle time
■ Advanced features
❐ Software-programmable block write-protect
■ Superior to battery-backed SRAM modules
❐ No battery concerns
❐ Monolithic reliability
❐ True surface-mount solution, no rework steps
❐ Superior for moisture, shock, and vibration
■ Low power consumption
❐ Active current 7 mA (typ)
❐ Standby current 120 A (typ)
■ Low-voltage operation: VDD = 2.0 V to 3.6 V
Logic Block Diagram
■ Automotive-A temperature: –40 C to +85 C
■ 44-pin thin small outline package (TSOP) Type II
■ Restriction of hazardous substances (RoHS)-compliant
Functional Description
The CY15B102N is a 128K × 16 nonvolatile memory that reads
and writes similar to a standard SRAM. A ferroelectric random
access memory or F-RAM is nonvolatile, which means that data
is retained after power is removed. It provides data retention for
over 151 years while eliminating the reliability concerns,
functional disadvantages, and system design complexities of
battery-backed SRAM (BBSRAM). Fast write-timing and high
write-endurance make the F-RAM superior to other types of
memory.
The CY15B102N operation is similar to that of other RAM
devices, and, therefore, it can be used as a drop-in replacement
for a standard SRAM in a system. Read cycles may be triggered
by CE or simply by changing the address and write cycles may
be triggered by CE or WE. The F-RAM memory is nonvolatile
due to its unique ferroelectric memory process. These features
make the CY15B102N ideal for nonvolatile memory applications
requiring frequent or rapid writes.
The device is available in a 400-mil, 44-pin TSOP-II
surface-mount package. Device specifications are guaranteed
over the Automotive-A temperature range –40 °C to +85 °C.
For a complete list of related resources, click here.
16 K x 16 block 16 K x 16 block
A16-0
A16-2
A 1-0
CE
WE
UB, LB
OE
ZZ
Control
Logic
16 K x 16 block 16 K x 16 block
16 K x 16 block 16 K x 16 block
16 K x 16 block 16 K x 16 block
...
Column Decoder
I/O Latch & Bus Driver
DQ15-0
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-93140 Rev. *C
• San Jose, CA 95134-1709 • 408-943-2600
Revised September 4, 2015
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Pages | Pages 22 | ||
Télécharger | [ CY15B102N ] |
No | Description détaillée | Fabricant |
CY15B102N | 2-Mbit (128K x 16) Automotive F-RAM Memory | Cypress Semiconductor |
CY15B102Q | 2-Mbit (256 K x 8) Serial (SPI) Automotive F-RAM | Cypress Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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