DataSheetWiki


CY15B102N fiches techniques PDF

Cypress Semiconductor - 2-Mbit (128K x 16) Automotive F-RAM Memory

Numéro de référence CY15B102N
Description 2-Mbit (128K x 16) Automotive F-RAM Memory
Fabricant Cypress Semiconductor 
Logo Cypress Semiconductor 





1 Page

No Preview Available !





CY15B102N fiche technique
CY15B102N
2-Mbit (128K × 16) Automotive F-RAM
Memory
2-Mbit (128K × 16) Automotive F-RAM Memory
Features
2-Mbit ferroelectric random access memory (F-RAM™)
logically organized as 128K × 16
Configurable as 256K × 8 using UB and LB
High-endurance 100 trillion (1014) read/writes
151-year data retention (see the Data Retention and
Endurance table)
NoDelay™ writes
Page-mode operation for 30-ns cycle time
Advanced high-reliability ferroelectric process
SRAM compatible
Industry-standard 128K × 16 SRAM pinout
60-ns access time, 90-ns cycle time
Advanced features
Software-programmable block write-protect
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface-mount solution, no rework steps
Superior for moisture, shock, and vibration
Low power consumption
Active current 7 mA (typ)
Standby current 120 A (typ)
Low-voltage operation: VDD = 2.0 V to 3.6 V
Logic Block Diagram
Automotive-A temperature: –40 C to +85 C
44-pin thin small outline package (TSOP) Type II
Restriction of hazardous substances (RoHS)-compliant
Functional Description
The CY15B102N is a 128K × 16 nonvolatile memory that reads
and writes similar to a standard SRAM. A ferroelectric random
access memory or F-RAM is nonvolatile, which means that data
is retained after power is removed. It provides data retention for
over 151 years while eliminating the reliability concerns,
functional disadvantages, and system design complexities of
battery-backed SRAM (BBSRAM). Fast write-timing and high
write-endurance make the F-RAM superior to other types of
memory.
The CY15B102N operation is similar to that of other RAM
devices, and, therefore, it can be used as a drop-in replacement
for a standard SRAM in a system. Read cycles may be triggered
by CE or simply by changing the address and write cycles may
be triggered by CE or WE. The F-RAM memory is nonvolatile
due to its unique ferroelectric memory process. These features
make the CY15B102N ideal for nonvolatile memory applications
requiring frequent or rapid writes.
The device is available in a 400-mil, 44-pin TSOP-II
surface-mount package. Device specifications are guaranteed
over the Automotive-A temperature range –40 °C to +85 °C.
For a complete list of related resources, click here.
16 K x 16 block 16 K x 16 block
A16-0
A16-2
A 1-0
CE
WE
UB, LB
OE
ZZ
Control
Logic
16 K x 16 block 16 K x 16 block
16 K x 16 block 16 K x 16 block
16 K x 16 block 16 K x 16 block
...
Column Decoder
I/O Latch & Bus Driver
DQ15-0
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-93140 Rev. *C
• San Jose, CA 95134-1709 • 408-943-2600
Revised September 4, 2015

PagesPages 22
Télécharger [ CY15B102N ]


Fiche technique recommandé

No Description détaillée Fabricant
CY15B102N 2-Mbit (128K x 16) Automotive F-RAM Memory Cypress Semiconductor
Cypress Semiconductor
CY15B102Q 2-Mbit (256 K x 8) Serial (SPI) Automotive F-RAM Cypress Semiconductor
Cypress Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche