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Winsemi - Ultrafast Single Diode

Numéro de référence WDW80S30B
Description Ultrafast Single Diode
Fabricant Winsemi 
Logo Winsemi 





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WDW80S30B fiche technique
WDW80S30B Product Description
80A,300V Ultrafast Single Diode
Features
Ultrafast recovery time
Soft Reverse Recovery characteristics
Low Recovery Loss
Low forward voltage
High Surge Current Capability
Low leakage current
General Description
FRD from Winsemi utilizes advanced processing techniques to
achieve ultrafast recovery times and higher forward current Its soft
recovery characteristics and high reliability suit for wide industrial
applications.
Applications
Freewheeling, Snubber, Clamp
Inversion Welder
PFC
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
UPS
Absolute Maximum Ratings
Symbol
Parameter
VR Maximum D.C.Reverse Voltage
VRRM
MaximumRepetitive Revers Voltage
IF(AV)
IF(RMS)
IFSM
PD
TJ
TSTG
Torque
RθJC
Weight
Average Forward Current
RMS Forward Current
No-Repetitive Peak Surge current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
Thermal Resistance
Test Conditions
Tc=110℃,Per Diode
Tc=110℃,Per Diode
TJ=45℃,t=10ms,50Hz,Sine
Recommended
Junction-to-Case
Value
300
300
80
110
640
250
150
-55~150
1.1
0.5
6.0
Units
V
V
A
A
A
W
N.m
℃/W
g
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WIN SEM I M ICROELECTRON ICS
WT-D006-Rev.A1 Apr.2014
WIN SEM I M ICROELECTRON ICS
0713

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