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Numéro de référence | WBP13007-K | ||
Description | NPN Power Transistor | ||
Fabricant | Winsemi | ||
Logo | |||
WBP13007-K
High Voltage Fast-Switching NPN Power Transistor
Features
■ Very High Switching Speed
■ High Voltage Capability
■ Wide Reverse Bias SOA
General Description
This device is designed for high voltage, High speed
switching characteristics required such as lighting
system ,switching mode power supply.
B
C
E
TO220
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO
VEBO
IC
ICP
IB
IBM
PC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25℃
Total Dissipation at Ta = 25℃
TJ Operation Junction Temperature
TSTG
Storage Temperature
Tc: Case temperature (good cooling)
Ta:Ambient temperature (without heat sink)
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
Value
700
400
9.0
8.0
16
4.0
8.0
80
2.05
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
1.56
62.5
Units
℃/W
℃/W
Rev.A Feb.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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Pages | Pages 5 | ||
Télécharger | [ WBP13007-K ] |
No | Description détaillée | Fabricant |
WBP13007-K | NPN Power Transistor | Winsemi |
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