(PDF) WBP3308 Datasheet - NPN Power Transistor

Número de pieza	WBP3308
Descripción	NPN Power Transistor
Fabricantes	Winsemi
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No Preview Available ! WBP3308 High Voltage Fast-Switching NPN Power Transistor Features ■ Very high switching speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collect-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Total Dissipation at Tc=25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE=0 IB=0 IC=0 (Note) Value 900 500 7 7 14 3 45 150 -55~150 Units V V V A A W ℃ ℃ Thermal Characteristics Symbol Parameter RӨJC Thermal Resistance Junction to Case Value 2.78 Units ℃/W Rev.A02 Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. 1 page WBP3308 Fig.11 Inductive Load Switching & RBSOA Test Circuit Fig.12 Inductive Load Switching &RBSOA Test Circuit Steady, keep you advance 5/6 5 Page

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PDF WBP3308 Data sheet ( Hoja de datos )