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Numéro de référence | WCD4C60S | ||
Description | Silicon Controlled Rectifiers | ||
Fabricant | Winsemi | ||
Logo | |||
WCD4C60S
Silicon Controlled Rectifiers
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 4 A )
◆ Low On-State Voltage (1.6V(Typ.) @ ITM)
General Description
Sensitive gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Parameter
Condition
VDRM
Repetitive Peak Off-State Voltage
IT(AV)
Average On-State Current(180°
Conduction Angle)
Ti =60 °C
Tamb=25 °C
IT(RMS)
R.M.S On-State Current(180°
Conduction Angle)
Ti =60 °C
Tamb=25 °C
ITSM Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
I2t I2t for Fusing
t =10ms
di/dt
Critical rate of rise of on-state current
F=60Hz,Tj=125 °C
PGM Forward Peak Gate Power Dissipation
PG(AV)
Forward Average Gate Power
Dissipation
Tj=125 °C
IFGM Forward Peak Gate Current
TJ Operating Junction Temperature
TSTG
Storage Temperature
Ratings
600
1.35
0.9
4
1.35
33
4.5
50
0.5
0.2
1.2A
-40~125 °C
-40~150 °C
Units
V
A
A
A
A2s
A/㎲
W
W
A
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case(DC)
RθJA Thermal Resistance Junction to Ambient(DC)
Jan 2009 .Rev .0
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Value
15
100
Units
℃/W
℃/W
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Pages | Pages 5 | ||
Télécharger | [ WCD4C60S ] |
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