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Vishay - Infrared Emitting Diode

Numéro de référence TSUS6202
Description Infrared Emitting Diode
Fabricant Vishay 
Logo Vishay 





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TSUS6202 fiche technique
www.vishay.com
TSUS6202
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
94 8390
DESCRIPTION
TSUS6202 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue-gray tinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 15°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Emitter in transmissive sensors
• Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT
TSUS6202
Ie (mW/sr)
30
Note
• Test conditions see table “Basic Characteristics”
ϕ (deg)
± 15
λP (nm)
950
tr (ns)
800
ORDERING INFORMATION
ORDERING CODE
TSUS6202
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
tp/T = 0.5, tp = 100 μs
tp = 100 μs
t 5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
5
150
300
2.5
170
100
-40 to +85
-40 to +100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Rev. 1.0, 29-Sep-15
1 Document Number: 84333
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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