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Numéro de référence | MCR100-8 | ||
Description | Sillicon Controlled Rectifiers | ||
Fabricant | LITE-ON | ||
Logo | |||
1 Page
LITE-ON
SEMICONDUCTOR
Sensitive Gate
Sillicon Controlled Rectifiers
Reverse Blocking Thyristors
FEATURES
Sensitive Gate Allows Triggering by Microcontrollers and Other
logic Circuits
Blocking Voltage to 600 Volts
On–State Current Rating of 0.25 Amperes RMS at 80℃
High Surge Current Capability — 9 Amperes
Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
Immunity to dV/dt — 20 V/us Minimum at Tj=110℃
Glass-Passivated Surface for Reliability and Uniformity
Autoclave test meets JESD22-A102-C, Condition B.
MECHANICAL DATA
Case: Molded plastic
Pb-Free Package
Weight: 0.007 ounces, 0.2 grams
MCR100-8
SCRs
0.25 AMPERES RMS
600 VOLTS
SOT-23
SOT-23
DIM. MIN. MAX.
A
0.89
1.20
B
0.30
0.51
C 0.085 0.18
D
2.75
3.04
E
1.20
1.60
F
0.85
1.05
G
1.70
2.10
H
2.10
2.75
I 0.0 0.1
L 0.60 typ.
S
0.35
0.65
All Dimensions in millimeter
Pin diagram (top view)
MAXIMUM RATINGS (Tj= 25℃unless otherwise noticed)
Rating
Peak Repetitive Off–State Voltage
(TJ= -40 to 110℃, Sine Wave, 50 to 60 Hz; Gate Open)
On-State RMS Current (Tc = 80℃) 180° Conduction Angles
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25℃)
Circuit Fusing Consideration (t = 8.3 ms)
Forward Peak Gate Power (Ta = 25℃, Pulse Width ≦1.0 us)
Forward Average Gate Power (Ta = 25℃, t = 8.3 ms)
Forward Peak Gate Current (Ta = 25℃, Pulse Width≦1.0 us)
Reverse Peak Gate Voltage (Ta = 25℃, Pulse Width ≦1.0 ms)
Operating Junction Temperature Range @ Rate VRRM and VDRM
Storage Temperature Range
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2 t
PGM
PG(AV)
IGM
VGRM
TJ
Tstg
Value
Unit
600 Volts
0.25 Amps
9
0.336
0.1
Amps
A2s
Watts
0.1 Watts
1 Amps
5
-40 to + 110
Volts
℃
-40 to + 150
℃
REV. 1, May-2014, KSXE01
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Pages | Pages 5 | ||
Télécharger | [ MCR100-8 ] |
No | Description détaillée | Fabricant |
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