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PDF SISS71DN Data sheet ( Hoja de datos )
| Número de pieza | SISS71DN | |
| Descripción | P-Channel 100V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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www.vishay.com
SiSS71DN
Vishay Siliconix
P-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
-100
RDS(on) () (MAX.)
0.059 at VGS = -10 V
0.082 at VGS = -4.5 V
ID (A) e
-23
-19.6
PowerPAK® 1212-8S
D
D
D
6
7
5
D
8
Qg (TYP.)
20 nC
3.3 mm
1 3.3 mm
2
4
3
S
S
G
Top View
Bottom View
Ordering Information:
SiSS71DN-T1-GE3 (lead (Pb)-free and halogen-free)
1
S
FEATURES
• ThunderFET® power MOSFET
• Low thermal resistance PowerPAK® package
with small size and low 0.75 mm profile
• 100 % Rg and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Active clamp
• DC/DC converters
• POE
• Load switch
• Motor drive control
• Battery management
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) c, d
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
-100
± 20
-23
-18.5
-6.7 a, b
-5.4 a, b
-40
-40 e
-4 a, b
-25
31
57
36
4.8 a, b
3 a, b
-50 to +150
260
V
A
mJ
W
°C
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. TC = 25 °C.
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a, b
t 10 s
Maximum Junction-to-Case (Drain)
Steady state
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 63 °C/W.
SYMBOL
RthJA
RthJC
TYPICAL
21
1.7
MAXIMUM
26
2.2
UNIT
°C/W
S16-1378-Rev. A, 11-Jul-16
1
Document Number: 76642
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiSS71DN
Vishay Siliconix
Axis Title
30 10000
24
1000
18
12
100
6
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Current Derating a
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1378-Rev. A, 11-Jul-16
5
Document Number: 76642
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SISS71DN.PDF ] | |
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