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PDF SISS98DN Data sheet ( Hoja de datos )
| Número de pieza | SISS98DN | |
| Descripción | N-Channel 200V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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www.vishay.com
SiSS98DN
Vishay Siliconix
N-Channel 200 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
200
RDS(on) () (MAX.)
0.105 at VGS = 10 V
0.110 at VGS = 7.5 V
ID (A) a
14.1
13.8
Qg (TYP.)
9.3 nC
PowerPAK® 1212-8S
D
D
D
6
7
5
D
8
3.3 mm
1
Top View
3.3 mm
1
4
3
S
2
S
S
G
Bottom View
Ordering Information:
SiSS98DN-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• ThunderFET® power MOSFET
• Optimized Qg and Qoss improve efficiency
• 100 % Rg and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Primary side switching
• Synchronous rectification
• DC/DC converters
• Boost converters
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
200
± 20
14.1
11.2
4.1 b, c
3.2 b, c
30
14.1
4.3 b, c
10
5
57
36
4.8 b, c
3 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
21
1.7
26
°C/W
2.2
Notes
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
S16-0992-Rev. A, 23-May-16
1
Document Number: 66781
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
16 10000
12.8
1000
9.6
6.4
100
3.2
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Current Derating a
SiSS98DN
Vishay Siliconix
Axis Title
70 10000
Axis Title
2.5 10000
56 2.0
1000
1000
42 1.5
28 1.0
100 100
14 0.5
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Power, Junction-to-Case
0 10
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-0992-Rev. A, 23-May-16
5
Document Number: 66781
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SISS98DN.PDF ] | |
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