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PDF SIUD412ED Data sheet ( Hoja de datos )
| Número de pieza | SIUD412ED | |
| Descripción | N-Channel 12V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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www.vishay.com
SiUD412ED
Vishay Siliconix
N-Channel 12 V (D-S) MOSFET
PowerPAK® 0806 Single
D
3
0.8 mm
1 0.6 mm
Top View
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 4.5 V
RDS(on) max. () at VGS = 2.5 V
RDS(on) max. () at VGS = 1.8 V
RDS(on) max. () at VGS = 1.5 V
RDS(on) max. () at VGS = 1.2 V
Qg typ. (nC)
ID (A)
Configuration
2
S
Bottom View
1
G
12
0.34
0.4
0.55
1.2
2.5
0.47
0.5 a, f
Single
FEATURES
• TrenchFET® power MOSFET
• Ultra small 0.8 mm x 0.6 mm outline
• Ultra thin 0.4 mm max. height
• Typical ESD protection 1500 V (HBM)
• 1.2 V rated RDS(ON)
• 100% Rg tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
D
• Load switch
• High speed switching
• DC/DC converters
G
• Battery-operated and mobile devices
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 0806
SiUD412ED-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
VDS
Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (t = 100 μs)
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
VGS
ID
IDM
Continuous source-drain diode current
TA = 25 °C
TA = 70 °C
TA = 25 °C
IS
Maximum power dissipation
TA = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
TJ, Tstg
LIMIT
12
±5
0.5 a, f
0.5 a, f
0.5 b
0.5 b
1.5
0.5 a, f
0.37 b
1.25 a
0.8 a
0.37 b
0.24 b
-55 to +150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient a, d
t5s
RthJA
Maximum junction-to-ambient b, e
t5s
RthJA
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC / JEDEC® (J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 135 °C/W.
e. Maximum under steady state conditions is 400 °C/W.
f. Package limited.
TYPICAL
80
265
MAXIMUM
100
335
UNIT
°C/W
S16-1563-Rev. A, 08-Aug-16
1
Document Number: 70300
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Axis Title
10000
Package limited
1000
100
25 50 75 100 125
TA - Ambient Temperature (°C)
2nd line
Current Derating a
10
150
SiUD412ED
Vishay Siliconix
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
Axis Title
10 10000
Limited by RDS(on) (1)
IDM limited
1 1000
ID(ON) limited
0.1
100 μs
1 ms
10 ms
10 s, 1 s, 100 ms100
DC
0.01
TA = 25 °C
Single pulse
BVDSS limited
0.1 1 10
10
100
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1563-Rev. A, 08-Aug-16
5
Document Number: 70300
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SIUD412ED.PDF ] | |
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