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SQ2361AEES fiches techniques PDF

Vishay - Automotive P-Channel MOSFET

Numéro de référence SQ2361AEES
Description Automotive P-Channel MOSFET
Fabricant Vishay 
Logo Vishay 





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SQ2361AEES fiche technique
www.vishay.com
SQ2361AEES
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = -10 V
RDS(on) () at VGS = -4.5 V
ID (A)
Configuration
SOT-23 (TO-236)
D
3
1
G
Top View
Marking Code: 9Cxxx
2
S
-60
0.170
0.230
-2.9
Single
S
G
P-Channel MOSFET
D
FEATURES
• TrenchFET® power MOSFET
• Typical ESD protection: 800 V
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SOT-23
SQ2361AEES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IS
IDM
IAS
EAS
Maximum Power Dissipation a
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
-60
± 20
-2.8
-1.6
-2.5
-11
-13
8.4
2
0.67
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mount b
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
SYMBOL
RthJA
RthJF
LIMIT
175
75
UNIT
°C/W
S15-1208-Rev. A, 21-May-15
1
Document Number: 62997
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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