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SQ4483BEEY fiches techniques PDF

Vishay - Automotive P-Channel MOSFET

Numéro de référence SQ4483BEEY
Description Automotive P-Channel MOSFET
Fabricant Vishay 
Logo Vishay 





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SQ4483BEEY fiche technique
www.vishay.com
Work-In-Progress
SQ4483BEEY
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = -10 V
RDS(on) (Ω) at VGS = -4.5 V
ID (A)
Configuration
SO-8 Single
D
D5
D6
D7
8
-30
0.0085
0.0200
-22
Single
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• ESD Protection: 3000 V
• 100 % UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
4
3G
2S
1S
S
Top View
G 5400
P-Channel
D
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4483BEEY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 10 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
-30
± 20
-22
-13
-6
-84
-7
245
7
2
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
PCB Mount b
SYMBOL
RthJA
RthJF
LIMIT
85
21
UNIT
°C/W
SPending-Rev. C, 24-Jul-15
1
Document Number: 67097
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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