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PDF SQ4940EY Data sheet ( Hoja de datos )
| Número de pieza | SQ4940EY | |
| Descripción | Automotive Dual N-Channel MOSFET | |
| Fabricantes | Vishay | |
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SQ4940EY
Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
40
0.035
0.055
7
Dual
SO-8
D1 D2
S1 1
G1 2
S2 3
G2 4
Top View
8 D1
7 D1 G1
6 D2
5 D2
G2
S1
S2
N-Channel MOSFET N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedc
• Compliant to RoHS Directive 2002/95/EC
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4940EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
IDM
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
40
± 20
7
4
3
28
17
14
3.3
1.1
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
110
45
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S11-2113-Rev. B, 07-Nov-11
1
Document Number: 72163
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
10
100 μs
1
Limited by RDS(on)*
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
1 ms
10 ms
100 ms
1s
10 s, DC
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
SQ4940EY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
Single Pulse
10 -3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
S11-2113-Rev. B, 07-Nov-11
5
Document Number: 72163
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SQ4940EY.PDF ] | |
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