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Numéro de référence | SQ3426AEEV | ||
Description | Automotive N-Channel MOSFET | ||
Fabricant | Vishay | ||
Logo | |||
1 Page
www.vishay.com
SQ3426AEEV
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Configuration
TSOP-6 Single
S
4
D
5
D
6
60
0.042
0.063
7
Single
(1, 2, 5, 6) D
(3) G
FEATURES
• TrenchFET® power MOSFET
• Typical ESD protection 800 V HBM
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1
D
Top View
2
D
Marking Code: 8Nxxx
3
G
(4) S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TSOP-6
SQ3426AEEV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
60
± 20
7
4
6
29
10
5
5
1.6
- 55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
PCB Mount b
SYMBOL
RthJA
RthJF
LIMIT
110
30
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-1583-Rev. B, 02-Jul-15
1
Document Number: 62982
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Pages | Pages 13 | ||
Télécharger | [ SQ3426AEEV ] |
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