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Numéro de référence | SQD50N05-11L | ||
Description | Automotive N-Channel MOSFET | ||
Fabricant | Vishay | ||
Logo | |||
1 Page
www.vishay.com
SQD50N05-11L
Vishay Siliconix
Automotive N-Channel 50 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
TO-252
50
0.011
0.015
50
Single
D
FEATURES
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedd
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
G
GDS
Top View
Drain Connected to Tab
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
S
N-Channel MOSFET
TO-252
SQD50N05-11L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
TC = 25 °Ca
TC = 125 °C
VGS
ID
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
IDM
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
50
± 20
50
32
50
200
45
101
75
25
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mountc
SYMBOL
RthJA
RthJC
LIMIT
60
2.0
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S12-2673-Rev. C, 05-Nov-12
1
Document Number: 72168
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Pages | Pages 9 | ||
Télécharger | [ SQD50N05-11L ] |
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