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PDF SQR70090ELR Data sheet ( Hoja de datos )
| Número de pieza | SQR70090ELR | |
| Descripción | Automotive N-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
SQR70090ELR
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
TO-252 Reverse Lead DPAK
Unplated
1 mm max.
1 mm max.
Top View
S
D
Drain connected to tab.
G The drain tab (heatsink) is
unplated (at least 80 % of area).
G
D
S
Bottom View
FEATURES
• TrenchFET® power MOSFET
• Unplated drain tab (heatsink)
• Package with low thermal resistance
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
D
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
Package
100
0.0087
0.0106
86
Single
TO-252 Reverse Lead DPAK
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Continuous Source Current (Diode conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TC = 125 °C
L = 0.1 mH
ID
IS
IDM
IAS
EAS
Maximum Power Dissipation b
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
100
± 20
86
50
100
150
45
101
136
45
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB mount c
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
SYMBOL
RthJA
RthJC
LIMIT
50
1.1
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S16-1763-Rev. A, 05-Sep-16
1
Document Number: 75462
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
100
IDM Limited
10
1
Limited by RDS(on)*
100 μs
1 ms
10 ms
100 ms
1 s, 10 s, DC
0.1
0.01
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10 100 1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
SQR70090ELR
Vishay Siliconix
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-2
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 50 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-1 1 10 100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
S16-1763-Rev. A, 05-Sep-16
5
Document Number: 75462
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SQR70090ELR.PDF ] | |
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