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PDF SQR40N10-25 Data sheet ( Hoja de datos )
| Número de pieza | SQR40N10-25 | |
| Descripción | Automotive N-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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SQR40N10-25
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Configuration
Package
100
0.025
0.029
40
Single
TO-252 Reverse Lead
DPAK
TO-252 Reverse Lead DPAK
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
SG
D
Drain connected
to tab
D
G
Top View
S
Bottom View
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C a
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
100
± 20
40
26
40
160
40
80
136
45
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
PCB Mount c
SYMBOL
RthJA
RthJC
LIMIT
50
1.1
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-1873-Rev. F, 10-Aug-15
1
Document Number: 69060
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
100
Limited by
RDS(on)*
10 ID Limited
1
SQR40N10-25
Vishay Siliconix
100 µs
1 ms
10 ms
100 ms, 1 s, 10 s, DC
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
* VGS
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
S15-1873-Rev. F, 10-Aug-15
5
Document Number: 69060
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SQR40N10-25.PDF ] | |
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