DataSheetWiki


SSM4232GM fiches techniques PDF

Silicon Standard - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence SSM4232GM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Silicon Standard 
Logo Silicon Standard 





1 Page

No Preview Available !





SSM4232GM fiche technique
SSM4232GM
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Low On-Resistance
Simple Drive Requirement
Dual N MOSFET Package
DESCRIPTION
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast
switching, ruggedized device design, ultra low on-resistance
and cost-effectiveness.
BVDSS
RDS(ON)
ID
D1
G1 G2
S1
30V
22mΩ
7.8A
D2
S2
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
30
±20
7.8
6.2
30
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Value
62.5
Unit
/W
09/23/2007 Rev.1.00
www.SiliconStandard.com
1

PagesPages 5
Télécharger [ SSM4232GM ]


Fiche technique recommandé

No Description détaillée Fabricant
SSM4232GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET Silicon Standard
Silicon Standard

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche