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PDF SSM4228GM Data sheet ( Hoja de datos )
| Número de pieza | SSM4228GM | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS | |
| Fabricantes | Silicon Standard | |
| Logotipo |  |
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SSM4228M/GM
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Low on-resistance
High Vgs rating
Surface-mount package
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
30V
25mΩ
6.8A
D1
G1 G2
S1
D2
S2
This device is available with Pb-free lead finish (second-level interconnect) as SSM4228GM.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA=25°C
ID @ TA=70°C
IDM
PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,4
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Thermal Resistance Junction-ambient
Rating
30
± 25
6.8
5.5
30
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W/°C
°C
°C
Max.
Value
62.5
Unit
°C/W
4/26/2004 Rev.2.10
www.SiliconStandard.com
1 of 6
1 page  
SSM4228M/GM
15
Id=6A
V DS =20V
12
9
6
3
0
0 10 20 30 40
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
1000
Coss
Crss
100
10
1
6 11 16 21 26 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
10 2.5
Tj=150 o C
1
Tj=25 o C
2
1.5
0.1
0
0.4 0.8 1.2
V SD (V)
1.6
Fig 11. Forward Characteristic of
Reverse Diode
1
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
4/26/2004 Rev.2.10
www.SiliconStandard.com
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM4228GM.PDF ] | |
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