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PDF SM4303PSUC Data sheet ( Hoja de datos )
| Número de pieza | SM4303PSUC | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM4303PSUC
®
P-Channel Enhancement Mode MOSFET
Features
· -30V/-68A,
RDS(ON) = 9mW(max.) @ VGS =-10V
RDS(ON) = 15mW(max.) @ VGS =-4.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
· HBM ESD protection level pass 8KV
Note : The diode connected between the gate and
source serves only as protection against ESD. No
gate overvoltage rating is implied.
Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Pin Description
S
D
G
Top View of TO-251
D
G
S
P-Channel MOSFET
Ordering and Marking Information
SM4303PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
UC：TO-251
Operating
C：-55
Jtuon1ct5io0no
Temperature
C
Range
Handling Code
TU：Tube (80ea/tube)
Assembly Material
G：Halogen and Lead Free Device
SM4303PS UC :
SM4303P
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - January, 2014
1
www.sinopowersemi.com
1 page  
SM4303PSUC
Typical Operating Characteristics (Cont.)
®
Output Characteristics
80
VGS=-5,-6,-7,-8,-9,-10V
70 -4V
60
50
40 -3.5V
30
20
-3V
10
-2.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
21
18
15
V =-4.5V
12 GS
9
VGS=-10V
6
3
0
0 20 40 60 80
-ID - Drain Current (A)
Gate-Source On Resistance
35
IDS=-20A
30
25
20
15
10
5
0
2 3 4 5 6 7 8 9 10
-VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS=-250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - January, 2014
5
www.sinopowersemi.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SM4303PSUC.PDF ] | |
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