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Número de pieza | SM4365NAKP | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | Sinopower | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SM4365NAKP (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! SM4365NAKP
Features
· 30V/45A,
RDS(ON)= 10.5mW (max.) @ VGS=10V
RDS(ON)= 14.5mW (max.) @ VGS=4.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
· 100% UIS Tested
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDDD
S S SG
DFN5x6-8
(5,6,7,8)
DD DD
Pin 1
Applications
· Power Management in Desktop Computer or
DC/DC Converters.
(4) G
Ordering and Marking Information
SSS
( 1, 2, 3 )
N-Channel MOSFET
SM4365NA
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM4365NA KP :
SM4365A
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.6 - February, 2014
1
www.sinopowersemi.com
1 page SM4365NAKP
®
Typical Operating Characteristics (Cont.)
100
90
80
70
60
50
40
30
20
10
0
0.0
Output Characteristics
VGS= 6,7,8,9,10V
5V
4.5V
4V
3.5V
3V
0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
20
18
16 VGS=4.5V
14
12
10
V =10V
GS
8
6
4
2
0 20 40 60 80 100
ID- Drain Current (A)
Gate-Source On Resistance
28
I =30A
DS
24
20
16
12
8
4
2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.6 - February, 2014
5
www.sinopowersemi.com
5 Page SM4365NAKP
Taping Direction Information
DFN5x6-8
USER DIRECTION OF FEED
®
Classification Profile
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.6 - February, 2014
11
www.sinopowersemi.com
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet SM4365NAKP.PDF ] |
Número de pieza | Descripción | Fabricantes |
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