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PDF SM4375NSKP Data sheet ( Hoja de datos )

Número de pieza SM4375NSKP
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Sinopower 
Logotipo Sinopower Logotipo



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No Preview Available ! SM4375NSKP Hoja de datos, Descripción, Manual

SM4375NSKP
Features
· 30V/60A,
RDS(ON)= 3.8mW (max.) @ VGS=10V
RDS(ON)= 5.3mW (max.) @ VGS=4.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDDD
S S SG
DFN5x6-8
Pin 1
D (5, 6, 7, 8)
Applications
· Power Management in Desktop Computer or
DC/DC Converters.
G (4)
S (1, 2, 3)
N-Channel MOSFET
Ordering and Marking Information
SM4375NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM4375NS KP :
SM4375
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - February, 2014
1
www.sinopowersemi.com

1 page




SM4375NSKP pdf
SM4375NSKP
Typical Operating Characteristics (Cont.)
®
Output Characteristics
120
V =4,5,6,7,8,9,10V
GS
100
3.5V
80
60
40
3V
20
2.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
7
6
5
VGS=4.5V
4
3 VGS=10V
2
1
0 20 40 60 80 100 120
ID- Drain Current (A)
Gate-Source On Resistance
12
IDS=30A
10
8
6
4
2
0
2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - February, 2014
5
www.sinopowersemi.com

5 Page





SM4375NSKP arduino
SM4375NSKP
®
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Ts max) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 °C/second max.
3°C/second max.
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time (tP)** within 5°C of the specified
classification temperature (Tc)
183 °C
60-150 seconds
See Classification Temp in table 1
20** seconds
217 °C
60-150 seconds
See Classification Temp in table 2
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max.
6 °C/second max.
Time 25°C to peak temperature
6 minutes max.
8 minutes max.
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process Classification Temperatures (Tc)
Package
Thickness
Volume mm3
<3 50
Volume mm3
³350
<2.5 mm
235 °C
220 °C
³2.5 mm
220 °C
220 °C
Table 2. Pb-free Process Classification Temperatures (Tc)
Package
Volume mm3
Thickness
<350
<1.6 mm
260 °C
1.6 mm 2.5 mm
260 °C
³2.5 mm
250 °C
Volume mm3
3 50-2000
260 °C
250 °C
245 °C
Volume mm3
>2000
260 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
SOLDERABILITY
HTRB
HTGB
JESD-22, B102
JESD-22, A108
JESD-22, A108
PCT
JESD-22, A102
TCT
JESD-22, A104
Description
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - February, 2014
11
www.sinopowersemi.com

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