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PDF SSM4409GEM Data sheet ( Hoja de datos )

Número de pieza SSM4409GEM
Descripción P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Silicon Standard 
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PRODUCT SUMMARY
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
RoHS Compliant
SSM4409GEM
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
D
D
D
SO-8
G
S
SS
BVDSS
RDS(ON)
ID
-35V
7.5mΩ
-14.5A
DESCRIPTION
The Advanced Power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters.
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3a
Continuous Drain Current3a
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3a
Rating
-35
±20
-14.5
-12
-50
2.5
0.02
-55 to 150
-55 to 150
Value
Max 50
D
S
Units
V
V
A
A
A
W
W/
Unit
/W
08/04/2007 Rev.1.00
www.SiliconStandard.com
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SSM4409GEM pdf
SSM4409GEM
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
08/04/2007 Rev.1.00
www.SiliconStandard.com
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