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PDF SM4913TSK Data sheet ( Hoja de datos )
| Número de pieza | SM4913TSK | |
| Descripción | Dual N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM4913TSK
®
Dual N-Channel Enhancement Mode MOSFET
Features
· Channel 1
30V/6.8A,
RDS(ON) = 21.5mW (max.) @ VGS = 10V
RDS(ON) = 30mW (max.) @ VGS = 4.5V
· Channel 2 (Integrated Schottky Diode)
30V/10.3A,
RDS(ON) = 10.5mW (max.) @ VGS =10V
RDS(ON) = 17mW (max.) @ VGS =4.5V
· Reliable and Rugged
· Lead Free Available (RoHS Compliant)
· 100% UIS tested
Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Pin Description
G1 D2/S1
D2/S1
D2/S1
D1
D1
G2
S2
Top View of SOP - 8
D1
(1)(2)
S1/D2
(5)(6)(7)
G1 (8)
G2
(3)
S2 (4)
N-Channel MOSFET
Ordering and Marking Information
SM4913TS
SM4913TS K :
Assembly Material
Handling Code
Temperature Range
Package Code
4913
XXXXX
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - May, 2014
1
www.sinopowersemi.com
1 page  
SM4913TSK
Typical Characteristics
Channel 1
1.8
Power Dissipation
1.5
1.2
0.9
0.6
0.3
T =25oC
0.0 A
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
100
10
300ms
1 1ms
10ms
100ms
0.1
1s
DC
0.01 TA=25oC
0.01 0.1 1 10 100 300
VDS - Drain - Source Voltage (V)
®
Drain Current
8
7
6
5
4
3
2
1
0 TA=25oC,VG=10V
0 20 40 60 80
100 120 140 160
Tj - Junction Temperature (°C)
Thermal Transient Impedance
2
1 Duty = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
Single Pulse
0.01
1E-4 1E-3 0.01
Mounted on 1in2 pad
RqJA : 50 oC/W
0.1 1 10 100
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - May, 2014
5
www.sinopowersemi.com
5 Page 
SM4913TSK
Typical Characteristics (Cont.)
Channel 2
Drain-Source On Resistance
1.8
V = 10V
GS
1.6 IDS = 13A
1.4
1.2
1.0
0.8
0.6
0.4
0.2 RON@Tj=25oC: 8.7mW
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
®
Source-Drain Diode Forward
30
10 Tj=150oC
1 Tj=25oC
Tj=-50oC
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source - Drain Voltage (V)
1400
1200
Capacitance
Frequency=1MHz
1000
800
Ciss
600
400
200 Crss
Coss
0
0 5 10 15 20 25 30
VDS - Drain - Source Voltage (V)
Gate Charge
10
9
VDS=15V
IDS=13A
8
7
6
5
4
3
2
1
00 3 6 9 12 15
QG - Gate Charge (nC)
18
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - May, 2014
11
www.sinopowersemi.com
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet SM4913TSK.PDF ] | |
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