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PDF SM8401CSQ Data sheet ( Hoja de datos )
| Número de pieza | SM8401CSQ | |
| Descripción | Dual Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM8401CSQ
®
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
• N Channel (Integrated Schottky Diode)
30V/6.9A,
R
DS(ON)
=
29mΩ
(max.)
@
V
GS
=
10V
RDS(ON) = 42mΩ (max.) @ VGS = 4.5V
RDS(ON) = 50mΩ (max.) @ VGS = 4V
• P Channel
-30V/-5.9A,
RDS(ON) = 40mΩ (max.) @ VGS =-10V
R
DS(ON)
=
60mΩ
(max.)
@
V
GS
=-4.5V
RDS(ON) = 68mΩ (max.) @ VGS =-4V
• 100% UIS Tested
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)
• ESD Protection pass 2KV
Applications
• Synchronous Rectification.
• Motor Control.
• Fan Application.
Pin Description
D1D1D2D2
G2
S1G1S2
Top View of DFN3x3-8(NP)
(8) (7)
D1 D1
(6) (5)
D2 D2
(2) (4)
G1 G2
S1
(1)
N-Channel MOSFET
S2
(3)
P-Channel MOSFET
Ordering and Marking Information
SM8401CS
SM8401CS Q :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
8401C
XXXXX
Package Code
Q : DFN3x3-8(NP)
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - September, 2014
1
www.sinopowersemi.com
1 page  
SM8401CSQ
N Channel Typical Operating Characteristics
®
Power Dissipation
2.4
2.0
1.6
1.2
0.8
0.4
T =25oC
A
0.0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
8
7
6
5
4
3
2
1
T =25oC,V =10V
AG
0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
50
10
300µs
1ms
1
10ms
0.1
100ms
T =25oC
0.01 A
DC
1s
0.01 0.1 1 10 100 300
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
2
1 Duty = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
Single Pulse
0.01
1E-4 1E-3 0.01
Mounted on 1in2 pad
R :60 oC/W
θJA
0.1 1 10 60
Square Wave Pulse Duration (sec)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - September, 2014
5
www.sinopowersemi.com
5 Page 
SM8401CSQ
®
P Channel Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
1.8
V = -10V
GS
1.6
I = -4A
DS
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25 0
R @T =25oC:
ON j
33mΩ
25 50 75 100 125 150
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
10
T =150oC
j
T =25oC
1j
0.1
0.0 0.3 0.6 0.9 1.2 1.5
-VSD - Source - Drain Voltage (V)
Capacitance
900
Frequency=1MHz
750
600 Ciss
450
300
150
Crss
Coss
0
0 5 10 15 20 25 30
-VDS - Drain - Source Voltage (V)
10
V =-15V
DS
9 I =-4A
DS
8
Gate Charge
7
6
5
4
3
2
1
00 2 4 6 8 10 12 14
QG - Gate Charge (nC)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - September, 2014
11
www.sinopowersemi.com
11 Page | ||
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