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PDF SM2001CSK Data sheet ( Hoja de datos )

Número de pieza SM2001CSK
Descripción Dual Enhancement Mode MOSFET
Fabricantes Sinopower 
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No Preview Available ! SM2001CSK Hoja de datos, Descripción, Manual

SM2001CSK
®
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
· N-Channel
20V/9.5A,
RDS(ON) =14mW(max.) @ VGS = 4.5V
RDS(ON) =18mW(max.) @ VGS = 2.5V
· P-Channel
-20V/-6A,
RDS(ON) =45mW(max.) @ VGS =-4.5V
RDS(ON) =65mW(max.) @ VGS =-2.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Pin Description
D1
D1
D2
D2
S1
G1
S2
G2
Top View of SOP-8
(8) (7)
D1 D1
(6) (5)
D2 D2
(2) (4)
G1 G2
S1 S2
(1) (3)
N-Channel MOSFET P-Channel MOSFET
Ordering and Marking Information
SM2001CS
SM2001CS K :
Assembly Material
Handling Code
Temperature Range
Package Code
2001
XXXXX
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - December, 2013
1
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1 page




SM2001CSK pdf
SM2001CSK
®
N Channel Typical Operating Characteristics
Power Dissipation
2.4
2.0
1.6
1.2
0.8
0.4
T =25oC
A
0.0
0 20 40 60 80 100 120 140 160
TJ - Junction Temperature (°C)
Drain Current
10
8
6
4
2
T =25oC,V =4.5V
0A
G
0 20 40 60 80 100 120 140 160
TJ- Junction Temperature (°C)
Safe Operation Area
100
10
300ms
1ms
1
10ms
100ms
0.1
1s
DC
0.01 TA=25oC
0.01 0.1 1 10 100
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
2
1 Duty = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
Single Pulse
0.01
1E-4 1E-3 0.01
Mounted on 1in2 pad
R : 45oC/W
qJA
0.1 1 10 60
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - December, 2013
5
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5 Page





SM2001CSK arduino
SM2001CSK
®
P Channel Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
1.8
VGS = -4.5V
1.6 IDS = -6A
1.4
1.2
1.0
0.8
0.6
0.4 RON@Tj=25oC: 36mW
-50 -25 0 25 50 75 100 125 150
TJ- Junction Temperature (°C)
Source-Drain Diode Forward
20
10
Tj=150oC
1 Tj=25oC
0.1
0.0 0.3 0.6 0.9 1.2 1.5
-VSD - Source - Drain Voltage (V)
Capacitance
1000
900
Frequency=1MHz
800
700
600 Ciss
500
400
300
200
100 Crss
Coss
0
0 4 8 12 16 20
-VDS - Drain - Source Voltage (V)
Gate Charge
10
9
VDS=-10V
IDS=-6A
8
7
6
5
4
3
2
1
0
0 4 8 12
QG - Gate Charge (nC)
16
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - December, 2013
11
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