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PDF SM8206ACT Data sheet ( Hoja de datos )
| Número de pieza | SM8206ACT | |
| Descripción | Dual N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM8206ACT
®
Dual N-Channel Enhancement Mode MOSFET
Features
• 20V/6A,
R=
DS(ON)
26mΩ(max.)
@
V=
GS
4V
R=
DS(ON)
36mΩ(max.)
@
V=
GS
2.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Pin Description
G1
D1/D2
G2
S1
D1/D2
S2
Top View of TSOT-23-6
(2) (5)
D1 D2
• Power Management in Notebook Computer, (6) (4)
Portable Equipment, and Battery Powered
G1 G2
Systems.
Ordering and Marking Information
S1 S2
(1) (3)
N-Channel MOSFET
SM8206A
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
CT : TSOT-23-6
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM8206A CT: 8206
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - Jun., 2010
1
www.sinopowersemi.com
1 page  
SM8206ACT
Typical Operating Characteristics (Cont.)
®
Output Characteristics
24
V =3,4,5,6,7,8,9,10V
GS
21 2V
18
15
1.8V
12
9
6 1.5V
3
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
50
45
40
35 V =2.5V
GS
30
25
V =4V
GS
20
15
10
0 4 8 12 16 20 24
ID - Drain Current (A)
Gate-Source On Resistance
60
I =5A
DS
50
40
30
20
10
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-Source Voltage (V)
Gate Threshold Voltage
1.8
I
DS
=
250µA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - Jun., 2010
5
www.sinopowersemi.com
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