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Número de pieza | SM6018NSUB | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | Sinopower | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SM6018NSUB (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! SM6018NSU/SM6018NSUB
®
N-Channel Enhancement Mode MOSFET
Features
Pin Configuration
· 60V/24A,
RDS(ON) = 40mW (max.) @ VGS = 10V
RDS(ON )= 50mW (max.) @ VGS = 5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
D
S
G
S
D
G
Top View of TO-252-3
Top View of TO-251
D
· Switching Application for Actuator.
· Converter Application in LED TV.
· Switching Application in Industry.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM6018NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252-3 UB : TO-251
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (TO-252-3, 2500ea/reel)
TU : Tube (TO-251, 80ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM6018NS U/UB :
SM6018N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - November, 2013
1
www.sinopowersemi.com
1 page SM6018NSU/SM6018NSUB
®
Typical Operating Characteristics (Cont.)
Output Characteristics
30
Drain-Source On Resistance
70
25 60
VGS=4.5,5,6,7,8,9,10V
4V
20 50 VGS=5V
15
10 3.5V
40
VGS=10V
30
5
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
20
10
0 5 10 15 20 25 30
ID - Drain Current (A)
Gate-Source On Resistance
100
IDS=12A
90
80
70
60
50
40
30
20
2 3 4 5 6 7 8 9 10
VGS - Gate-Source Voltage (V)
Gate Threshold Voltage
1.6
IDS=250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (oC)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - November, 2013
5
www.sinopowersemi.com
5 Page SM6018NSU/SM6018NSUB
Taping Direction Information
TO-252-3
USER DIRECTION OF FEED
®
Classification Profile
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - November, 2013
11
www.sinopowersemi.com
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet SM6018NSUB.PDF ] |
Número de pieza | Descripción | Fabricantes |
SM6018NSU | N-Channel Enhancement Mode MOSFET | Sinopower |
SM6018NSUB | N-Channel Enhancement Mode MOSFET | Sinopower |
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