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Ruichips - P-Channel Advanced Power MOSFET

Numéro de référence RU1HL8L
Description P-Channel Advanced Power MOSFET
Fabricant Ruichips 
Logo Ruichips 





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RU1HL8L fiche technique
RU1HL8L
P-Channel Advanced Power MOSFET
Features
• -100V/-8A,
RDS (ON) =350m(Typ.)@VGS=-10V
RDS (ON) =400m(Typ.)@VGS=-4.5V
Super High Dense Cell Design
ESD protected
Reliable and Rugged
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO252
Applications
Power Management
DC/DC Converters
P-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
-100
±16
175
-55 to 175
-8
-32
-8
-6
40
20
3.75
25
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
CopyrightRuichips Semiconductor Co., Ltd
Rev. B– JUN., 2014
www.ruichips.com

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