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PDF RU1HL13R Data sheet ( Hoja de datos )
| Número de pieza | RU1HL13R | |
| Descripción | P-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU1HL13R
P-Channel Advanced Power MOSFET
MOSFET
Features
• -100V/-13A,
RDS (ON) =160mΩ(tpy.)@VGS=-10V
RDS (ON) =180mΩ(tpy.)@VGS=-4.5V
• Super High Dense Cell Design
• ESD protected
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Power Management
• DC/DC Converters
Pin Description
TO-220
Absolute Maximum Ratings
P-Channel MOSFET
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
②
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
-100
±20
175
-55 to 175
-13
①
-52
-13
-9
54
27
2.8
56
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2012
www.ruichips.com
1 page  
Typical Characteristics
Drain-Source On Resistance
RU1HL13R
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
-VSD - Source-Drain Voltage (V)
Gate Charge
-VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2012
5
QG - Gate Charge (nC)
www.ruichips.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RU1HL13R.PDF ] | |
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