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PDF RU1HP60Q Data sheet ( Hoja de datos )
| Número de pieza | RU1HP60Q | |
| Descripción | P-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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Features
• -100V/-60A,
RDS (ON) =18mΩ(Typ.)@VGS=-10V
• Low On-Resistance
• Super High Dense Cell Design
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
Applications
•Load switch
RU1HP60Q
P-Channel Advanced Power MOSFET
Pin Description
G DS
TO247
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS③
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2016
1
P-Channel MOSFET
Rating
Unit
TC=25°C
-100
±25
175
-55 to 175
-60
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
-240
-60
-42
192
96
0.78
50
A
A
W
°C/W
°C/W
400 mJ
www.ruichips.com
1 page  
Typical Characteristics
Vgs=-8,-9,-10V
-6V
-5V
-3V
RU1HP60Q
VGS=-10V
VGS=-10V
ID=-60A
TJ=25°C
Rds(on)=18mΩ
TJ=175°C
TJ=25°C
Frequency=1.0MHz
Ciss
Crss
Coss
VDS=-80V
IDS=-60A
Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2016
5
www.ruichips.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RU1HP60Q.PDF ] | |
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