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Ruichips - N-Channel Advanced Power MOSFET

Numéro de référence RU2013H
Description N-Channel Advanced Power MOSFET
Fabricant Ruichips 
Logo Ruichips 





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RU2013H fiche technique
RU2013H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/13A,
RDS (ON) =13m(Typ.) @ VGS=10V
RDS (ON) =16m(Typ.) @ VGS=4.5V
RDS (ON) =22m(Typ.) @ VGS=2.5V
• Super High Dense Cell Design
• Low On-Resistance
Reliable and Rugged
• Lead Free and Green Available
Pin Description
SOP-8
Applications
DC/DC Converters
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
TA=25°C
ID
PD
RθJA
Continuous Drain Current(VGS=10V)
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Thermal Resistance-Junction to Ambient
Rating
20
±12
150
-55 to 150
4.5
50
13
10
3.1
2
40
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– AUG., 2011
www.ruichips.com

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