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Numéro de référence | RU2013H | ||
Description | N-Channel Advanced Power MOSFET | ||
Fabricant | Ruichips | ||
Logo | |||
RU2013H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/13A,
RDS (ON) =13mΩ (Typ.) @ VGS=10V
RDS (ON) =16mΩ (Typ.) @ VGS=4.5V
RDS (ON) =22mΩ (Typ.) @ VGS=2.5V
• Super High Dense Cell Design
• Low On-Resistance
• Reliable and Rugged
• Lead Free and Green Available
Pin Description
SOP-8
Applications
• DC/DC Converters
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
TA=25°C
ID
PD
②
RθJA
Continuous Drain Current(VGS=10V)
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Thermal Resistance-Junction to Ambient
Rating
20
±12
150
-55 to 150
4.5
①
50
13
10
3.1
2
40
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– AUG., 2011
www.ruichips.com
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Pages | Pages 9 | ||
Télécharger | [ RU2013H ] |
No | Description détaillée | Fabricant |
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