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PDF RU2090M Data sheet ( Hoja de datos )
| Número de pieza | RU2090M | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU2090M
N-Channel Advanced Power MOSFET
Features
• 20V/99A,
RDS (ON) =2.3mΩ(Typ.)@VGS=10V
RDS (ON) =4mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
PDFN5060
Applications
• Rectification
• Switching Application
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2012
N-Channel MOSFET
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
Rating
Unit
20
±12
150
-55 to 150
50
V
°C
°C
A
②
360
①
99
①
66
③
26
③
21
66
26
③
4.2
③
2.7
A
A
W
www.ruichips.com
1 page  
Typical Characteristics
Output Characteristics
RU2090M
Drain-Source On Resistance
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
ID - Drain Current (A)
Gate Threshold Voltage
VGS - Gate-Source Voltage (V)
Tj - Junction Temperature (°C)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2012
5
www.ruichips.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RU2090M.PDF ] | |
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