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RU1088R fiches techniques PDF

Ruichips - N-Channel Advanced Power MOSFET

Numéro de référence RU1088R
Description N-Channel Advanced Power MOSFET
Fabricant Ruichips 
Logo Ruichips 





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RU1088R fiche technique
RU1088R
N-Channel Advanced Power MOSFET
Features
100V/80A
RDS (ON)=10m(Typ.) @ VGS=10V
Ultra Low On-Resistance
Exceptional dv/dt capability
Fast Switching and Fully Avalanche Rated
100% avalanche tested
• Lead Free and Green Available
Applications
·Switching Application Systems
Pin Description
TO-220
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300µs Pulsed Drain Current Tested
ID Continue Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance -Junction to Case
Drain-Source Avalanche Ratings
EAS
Avalanche Energy ,Single Pulsed
N-Channel MOSFET
Rating
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
100
±25
175
-55 to 175
80
320
80
75
300
150
0.5
800
Unit
V
°C
°C
A
A
W
°C/W
mJ
CopyrightRuichips Semiconductor Co., Ltd
Rev. D –NOV., 2012
www.ruichips.com

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