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RU190N10Q fiches techniques PDF

Ruichips - N-Channel Advanced Power MOSFET

Numéro de référence RU190N10Q
Description N-Channel Advanced Power MOSFET
Fabricant Ruichips 
Logo Ruichips 





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RU190N10Q fiche technique
RU190N10Q
N-Channel Advanced Power MOSFET
Features
· 100V/190A
RDS (ON)=6.5m(Typ.) @ VGS=10V
·Avalanche Rated
· Reliable and Rugged
· Lead Free and Green Devices Available
Applications
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS
·High Speed Power Switching
Pin Description
TO-247
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
IDP 300µs Pulsed Drain Current Tested
ID Continue Drain Current(VGS=10V)
TC=25°C
TC=25°C
TC=100°C
PD Maximum Power Dissipation
RθJC Thermal Resistance -Junction to Case
TC=25°C
TC=100°C
Drain-Source Avalanche Ratings
Avalanche Energy ,Single Pulsed
StoraEgeASTemperature Range
-55 to 150
Copyright© Ruichips Semiconductor Co., Ltd
Rev. D – JAN., 2010
Rating
100
±25
175
-55 to 175
190
700
190
140
312
156
0.48
625
Unit
V
°C
°C
A
A
W
°C/W
mJ
www.ruichips.com

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