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PDF RU190N10R Data sheet ( Hoja de datos )
| Número de pieza | RU190N10R | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU190N10R
N-Channel Advanced Power MOSFET
Features
· 100V/190A
RDS (ON)=6.5mΩ(Typ.) @ VGS=10V
·Avalanche Rated
· Reliable and Rugged
· Lead Free and Green Devices Available
Applications
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS
·High Speed Power Switching
Pin Description
TO-220
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
IDP 300µs Pulsed Drain Current Tested
ID Continue Drain Current(VGS=10V)
TC=25°C
TC=25°C
TC=100°C
PD Maximum Power Dissipation
RθJC Thermal Resistance -Junction to Case
TC=25°C
TC=100°C
Drain-Source Avalanche Ratings
③ Avalanche Energy ,Single Pulsed
StoraEgeASTemperature Range
-55 to 150
Copyright© Ruichips Semiconductor Co., Ltd
Rev. D – JAN., 2010
Rating
100
±25
175
-55 to 175
①
190
②
700
①
190
①
140
312
156
0.48
625
Unit
V
°C
°C
A
A
W
°C/W
mJ
www.ruichips.com
1 page  
Typical Characteristics
Drain-Source On Resistance
RU190N10R
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. D– JAN., 2010
5
QG - Gate Charge (nC)
www.ruichips.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RU190N10R.PDF ] | |
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