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Ruichips - N-Channel Advanced Power MOSFET

Numéro de référence RU1HE16L
Description N-Channel Advanced Power MOSFET
Fabricant Ruichips 
Logo Ruichips 





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RU1HE16L fiche technique
RU1HE16L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/16A,
RDS (ON) =70mΩ(Typ.)@VGS=10V
RDS (ON) =85mΩ(Typ.)@VGS=4.5V
Super High Dense Cell Design
ESD protected
Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO252
Applications
Power Management.
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
100
±20
175
-55 to 175
16
64
16
11
50
25
3
70
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– APR., 2012
www.ruichips.com

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