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PDF RU1HE12L Data sheet ( Hoja de datos )
| Número de pieza | RU1HE12L | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU1HE12L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/12A,
RDS (ON) =145mΩ(Typ.)@VGS=10V
RDS (ON) =160mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design
• ESD protected
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Converters
Pin Description
TO252
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
100
±20
175
-55 to 175
12
①
48
②
12
8
40
20
3.75
9
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– JUN., 2011
www.ruichips.com
1 page  
Drain-Source On Resistance
RU1HE12L
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– JUN., 2011
5
QG - Gate Charge (nC)
www.ruichips.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RU1HE12L.PDF ] | |
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