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Ruichips - N-Channel Advanced Power MOSFET

Numéro de référence RU1H35Q
Description N-Channel Advanced Power MOSFET
Fabricant Ruichips 
Logo Ruichips 





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RU1H35Q fiche technique
RU1H35Q
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/40A,
RDS (ON) =21mΩ(Typ.)@VGS=10V
Super High Dense Cell Design
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO-247
Applications
Switching application
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– SEP., 2011
Rating
100
±25
175
-55 to 175
40
160
40
27
111
56
1.35
Unit
V
°C
°C
A
A
A
W
°C/W
220 mJ
www.ruichips.com

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