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TSA9N90MZ fiches techniques PDF

Truesemi - N-Channel MOSFET

Numéro de référence TSA9N90MZ
Description N-Channel MOSFET
Fabricant Truesemi 
Logo Truesemi 





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TSA9N90MZ fiche technique
TSA9N90MZ
900V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 9.0A, 900V, RDS(on) = 1.4@VGS = 10 V
• Low gate charge ( typical 45nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• ESD improved capability
GD S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TSA9N90MZ
900
9.0
5.7
36
30
900
28
4.0
280
2.22
-55 to +150
300
TYP MAX
-- 0.45
0.24 --
-- 40
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W

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