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Numéro de référence | TSA11N90M | ||
Description | N-Channel MOSFET | ||
Fabricant | Truesemi | ||
Logo | |||
TSA11N90M
900V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 11A,900V,Max.RDS(on)=1.20Ω @ VGS =10V
• Low gate charge(typical 52nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
EAR
IAR
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TC = 25℃
TC = 100℃
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Repetitive Avalanche current
(Note 1)
Power Dissipation (TC = 25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
900
± 30
11
6.8
36
900
13
9
130
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Junction-to-Ambient
Typ.
--
--
Max.
0.96
40
Units
V
V
A
A
A
mJ
mJ
A
W
℃
℃
Units
℃/W
℃/W
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com
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Pages | Pages 7 | ||
Télécharger | [ TSA11N90M ] |
No | Description détaillée | Fabricant |
TSA11N90M | N-Channel MOSFET | Truesemi |
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