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TSA60R190S1 fiches techniques PDF

Truesemi - N-Channel MOSFET

Numéro de référence TSA60R190S1
Description N-Channel MOSFET
Fabricant Truesemi 
Logo Truesemi 





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TSA60R190S1 fiche technique
TSA60R190S1
600V 20A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• 650V @TJ = 150
• Typ. RDS(on) = 0.16Ω
• Ultra Low gate charge (typ. Qg = 70nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
Drain Current Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
dv/dt
PD
TJ, TSTG
TL
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
-Derate above 25℃
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
600
20
10
62
±30
525
20
1
4.5
208
1.67
-55 to +150
300
Value
0.6
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/
Unit
/W
/W
/W
www.truesemi.com

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