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Truesemi - N-Channel MOSFET

Numéro de référence TSA23N50M
Description N-Channel MOSFET
Fabricant Truesemi 
Logo Truesemi 





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TSA23N50M fiche technique
TSA23N50M
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 20A,500V,Max.RDS(on)=0.26Ω @ VGS =10V
• Low gate charge(typical 70nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TJ=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
EAR
dv/dt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TC = 25
TC = 100
(Note 1)
(Note 2)
(Note 1)
(Note 3)
500
±30
23
15
92
1110
28
4.5
PD
Power Dissipation (TC = 25)
-Derate above 25
280
2.3
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Case-to-Sink Typ.
Thermal Resistance,Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.44
--
40
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/
Units
/W
/W
/W
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com

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