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Truesemi - N-Channel MOSFET

Numéro de référence TSA20N60S
Description N-Channel MOSFET
Fabricant Truesemi 
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TSA20N60S fiche technique
TSA20N60S, TSK20N60S
600V N-Channel MOSFET
September, 2013
SJ-FET
Description
SJ-FET is new generation of high voltage MOSFET family that
is utilizing an advanced charge balance mechanism for
outstanding low on-resistance and lower gate charge
performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy. SJ-
FET is suitable for various AC/DC power conversion
inswitching mode operation for higher efficiency.
Features
• 650V @TJ = 150
• Typ. RDS(on) = 0.16Ω
• Ultra Low Gate Charge (typ. Qg = 63nC)
• 100% avalanche tested
• Rohs Compliant
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
Drain Current - Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD
Power Dissipation (TC = 25)
-Derate above 25
TJ, TSTG Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
TL Purpose,
* Drain cu1r/r8e”nftrloimmitCedasbeyfmora5xiSmeucmonjudnsction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC
RθCS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
RθJA
Thermal Resistance, Junction-to-Ambient
©2013 True Semiconductor Corporation
TSA20N60S, TSK20N60S Rev.1.0
TSA_K20N60S
600
20*
10*
62*
±30
525
20
1
4.5
151
1.67
-55 to +150
300
TSA_K20N60S
0.83
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/
Unit
/W
/W
/W

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