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GeneSiC - Junction Transistor

Numéro de référence GA05JT01-46
Description Junction Transistor
Fabricant GeneSiC 
Logo GeneSiC 





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GA05JT01-46 fiche technique
GA05JT01-46
Normally OFF Silicon Carbide
Junction Transistor
Features
225°C maximum operating temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Compatible with 5 V TTL Gate Drive
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Package
RoHS Compliant
D
SG
TO-46
VDS =
RDS(ON)
=
ID (Tc = 25°C) =
hFE (Tc = 25°C) =
100 V
240 mΩ
9A
110
D
G
S
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA05JT01-46...............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 10
Section VII: SPICE Model Parameters ......................................................................................................... 11
Section I: Absolute Maximum Ratings
Parameter
Drain Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate Source Voltage
Reverse Drain Source Voltage
Power Dissipation
Operating and Storage Temperature
Symbol
VDS
ID
IGM
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Conditions
VGS = 0 V
TJ = 225°C, TC = 25°C
TVJ = 225°C, IG = 0.5 A,
Clamped Inductive Load
TVJ = 225°C, IG = 0.5 A, VDS = 70 V,
Non Repetitive
TJ = 225°C, TC = 25°C
Value
100
5.8
0.5
ID,max = 9
@ VDS ≤ VDSmax
>20
30
25
20
-55 to 225
Unit
V
A
A
A
µs
V
V
W
°C
Notes
Fig. 21
Fig. 19
Fig. 16
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
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