BLD123DL Datasheet PDF - SI Semiconductors
| Part Number | BLD123DL | |
| Description | TRANSISTORS | |
| Manufacturers | SI Semiconductors | |
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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN 低压系列晶体管/ L SERIES TRANSISTORS
BLD123DL
●特点: 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范
■ ■ ■ ■●FEATURES： HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA RoHS COMPLIANT
●应用: 适用于 110V 电路 节能灯 电子镇流器
■ ■●APPLICATION: SUITABLE FOR 110V CIRCUIT MODE FLUORESCENT LAMP
ELECTRONIC BALLAST
●最大额定值（Tc=25°C）
●Absolute Maximum Ratings（Tc=25°C）
TO-92/92S/126/126S
参数
PARAMETER
符号
SYMBOL
额定值 VALUE
单位
UNIT
集电极-基极电压
Collector-Base Voltage
VCBO
400 V
集电极-发射极电压
Collector-Emitter Voltage
VCEO
200 V
发射极-基极电压
Emitter- Base Voltage
VEBO
V
9
集电极电流
Collector Current
IC
3A
集电极耗散功率
Total Power Dissipation
TO-92/92S:15
Ptot
W
TO-126/126S:25
高工作温度
Junction Temperature
Tj
150 °C
贮存温度
Storage Temperature
Tstg
-65-150
°C
●电特性（Tc=25°C）
●Electronic Characteristics（Tc=25°C）
参数名称
符号
测试条件
CHARACTERISTICS
集电极-基极截止电流
Collector-Base Cutoff Current
SYMBOL
ICBO
TEST CONDITION
VCB=400V
集电极-发射极截止电流
Collector-Emitter Cutoff Current
ICEO VCE=200V,IB=0
集电极-基极电压
Collector-Base Voltage
VCBO
IC=1mA,IE=0
集电极-发射极电压
Collector-Emitter Voltage
VCEO
IC=10mA,IB=0
发射极-基极电压
Emitter -Base Voltage
VEBO
IE=1mA,IC=0
最小值
MIN
400
200
9
最大值
MAX
100
250
单位
UNIT
μA
μA
V
V
V
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vces
Vbes
IC=1A,IB=0.2A
IC=2.5A,IB=0.5A
IC=2.5A,IB=0.5A
0.50
1.30
1.50
V
V
电流放大倍数
DC Current Gain
VCE=5V,IC=1mA
7
hFE
VCE=5V,IC=0.2A
10
40
VCE=5V,IC=3A
5
贮存时间/Storage Time
tS
VCC=5V,IC=0.25A
(UI9600)
1.5
3.0
µs
内置二极管正向压降
Diode Forward Voltage
VF IF =1.5A
2.0 V
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-92 普通袋装/NORMAL PACKING
TO-92S 普通袋装/NORMAL PACKING
TO-92 盒式编带/AMMOPACK
TO-126 普通袋装/NORMAL PACKING
TO-126S 普通袋装/NORMAL PACKING
订货编码/ORDERING CODE
普通塑封料/ Nornal Package Material 无卤塑封料/Halogen Free
BLD123DL TO-92
BLD123DL TO-92-HF
BLD123DL TO-92S
BLD123DL TO-92S-HF
BLD123DL TO-92-AP
BLD123DL TO-92-AP-HF
BLD123DL TO-126
BLD123DL TO-126-HF
BLD123DL TO-126S
BLD123DL TO-126S-HF
1
Si semiconductors 2013.12
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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
符号
SYMBOL
A
B
b
c
D
E
e
最小值
min
2.30
1.15
0.65
0.35
10.50
7.20
TO-126 封装机械尺寸
TO-126 MECHANICAL DATA
典型值
nom
2.29
最大值
max
2.80
1.42
0.90
0.65
11.10
7.80
符号
SYMBOL
L
L1
φP
φP1
Q
Q1
R
最小值
min
15.00
1.50
2.90
3.60
0.90
单位:毫米/UNIT：mm
典型值
nom
最大值
max
16.50
2.54
3.60
5.00
4.40
1.50
0.50
Si semiconductors 2013.12
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BLD123DL electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BLD123DL.PDF Datasheet ] | |
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