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SI Semiconductors - TRANSISTORS

Numéro de référence BLD123DAL
Description TRANSISTORS
Fabricant SI Semiconductors 
Logo SI Semiconductors 





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BLD123DAL fiche technique
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN 低压系列晶体管/ L SERIES TRANSISTORS
BLD123DAL
●特点: 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范
■ ■ ■ ■FEATURESHIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA RoHS COMPLIANT
●应用: 适用于 110V 电路 节能灯 电子镇流器
■ ■APPLICATION: SUITABLE FOR 110V CIRCUIT MODE FLUORESCENT LAMP
ELECTRONIC BALLAST
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°C
TO-92/92S/126/126S
参数
PARAMETER
符号
SYMBOL
额定值 VALUE
单位
UNIT
集电极-基极电压
Collector-Base Voltage
VCBO
400 V
集电极-发射极电压
Collector-Emitter Voltage
发射极-基极电压
Emitter- Base Voltage
VCEO
VEBO
200 V
9V
集电极电流
Collector Current
IC
4A
集电极耗散功率
TO-92/92S:20
W
Total Power Dissipation
Ptot TO-126/126S:30
最高工作温度
Junction Temperature
Tj
150 °C
贮存温度
Storage Temperature
Tstg
-65-150
°C
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数名称
符号
测试条件
最小值
CHARACTERISTICS
集电极-基极截止电流
Collector-Base Cutoff Current
集电极-发射极截止电流
Collector-Emitter Cutoff Current
集电极-基极电压
Collector-Base Voltage
SYMBOL
ICBO
ICEO
VCBO
TEST CONDITION
VCB=400V
VCE=200V,IB=0
IC=1mA,IE=0
MIN
400
集电极-发射极电压
Collector-Emitter Voltage
VCEO
IC=10mA,IB=0
200
发射极-基极电压
Emitter -Base Voltage
VEBO
IE=1mA,IC=0
9
最大值
MAX
100
250
单位
UNIT
μA
μA
V
V
V
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vces
Vbes
IC=1A,IB=0.2A
IC=3.0A,IB=0.6A
IC=3.0A,IB=0.6A
0.4
V
1.1
1.5 V
电流放大倍数
DC Current Gain
VCE=5V,IC=1mA
7
hFE
VCE=5V,IC=0.5A
10
30
VCE=5V,IC=4.0A
5
贮存时间/Storage Time
内置二极管正向压降
Diode Forward Voltage
tS
VCC=5V,IC=0.25A
(UI9600)
1.5
3.5
µs
VF IF =2.0A
2.2 V
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-92 普通袋装/NORMAL PACKING
TO-92S 普通袋装/NORMAL PACKING
TO-92 盒式编带/AMMOPACK
TO-126 普通袋装/NORMAL PACKING
TO-126S 普通袋装/NORMAL PACKING
订货编码/ORDERING CODE
普通塑封料/ Nornal Package Material 无卤塑封料/Halogen Free
BLD123DAL TO-92
BLD123DAL TO-92-HF
BLD123DAL TO-92S
BLD123DAL TO-92S-HF
BLD123DAL TO-92-AP
BLD123DAL TO-92-AP-HF
BLD123DAL TO-126
BLD123DAL TO-126-HF
BLD123DAL TO-126S
BLD123DAL TO-126S-HF
1
Si semiconductors 2013.12

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